Advances in Photovoltaics: Part 2 by Gerhard P. Willeke, Eicke R. Weber

By Gerhard P. Willeke, Eicke R. Weber

Semiconductors and Semimetals has individual itself in the course of the cautious number of recognized authors, editors, and individuals. initially widely recognized because the ''Willardson and Beer'' sequence, it has succeeded in publishing quite a few landmark volumes and chapters. The sequence publishes well timed, hugely appropriate volumes meant for long term impression and reflecting the actually interdisciplinary nature of the sector. The volumes in Semiconductors and Semimetals were and should stay of significant curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and sleek undefined. This quantity is the second of a suite of seven relating to photovoltaics.

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20. Here the upper and the right edge of the wafer were facing to the crucible walls during crystallization. It is well known that, during the silicon crystallization procedure, iron diffuses out of the casting crucible into the silicon material. Hence, it can be expected that iron may play a decisive role in forming these breakdown sites. Indeed, it had been shown in micro X-ray fluorescence investigations by Kwapil et al. (2009b) that iron-containing precipitates may exist in type-2 breakdown sites.

2010a). If DLIT images taken at several biases are evaluated, the diffusion and recombination current contributions can be completely separated from each other (Breitenstein, 2011). In Fig. , 2011a), together with the image of the effective ideality factor according to Eq. ). The color bar in (A) holds for all images, the scaling ranges are indicated in (A) and (B). After Breitenstein et al. (2011a), by courtesy of Springer. defects in the bulk material. Note that, if n2 is taken as a variable, the local values of J 02 spread over many orders of magnitude (Breitenstein, 2012).

Here the interesting region is the area between the breakdown sites. The essentially homogeneous current density signal in this region clearly increases with increasing temperature. A detailed voltage- and temperature-dependent analysis of the region framed in Fig. 16 has revealed that the current in this region increases linearly up to À10 V and then reaches a kind of saturation. The temperature coefficient (TC) is a few %/K at room temperature and reduces with increasing temperature (Bauer, 2009).

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